npn silicon planar rf transistors 2n3498, 2n3499, 2n3500, 2N3501 to-39 metal can package absolute maximum ratings (ta=25oc unless specified otherwise) description symbol test condition 2n3498 2n3500 units 2n3499 2N3501 collector emitter voltage v ceo 100 150 v collector base voltage v cbo 100 150 v emitter base voltage v ebo 6v collector current continuous i c 500 300 ma power dissipation @ ta=25oc p d 1.0 w derate above 25oc 5.71 mw/oc power dissipation@ tc=25oc p d 5.0 w derate above 25oc 28.6 mw/oc operating and storage junction t j , t stg -65 to +200 oc temperature range thermal resistance junction to ambient r th(j-a) 175 oc/w junction to case r th(j-c) 35 oc/w electrical characteristics (ta=25oc unless specified otherwise) description symbol test condition units min typ max collector emitter breakdown voltage bv ceo * 2n3498/3499 i c =10ma,i b =0 100 v 2n3500/3501 150 v collector base breakdown voltage bv cbo i c =10 a, i e =0 2n3498/3499 100 v 2n3500/3501 150 v emitter base breakdown voltage bv ebo i e =10 a, i c =0 all 6 v collector leakage current 2n3498/3499 i cbo v cb =50v, i e =0 50 na 2n3498/3499 v cb =50v, i e =0,t a =150oc 50 a 2n3500/3501 v cb =75v, i e =0 50 na 2n3500/3501 v cb =75v, i e =0,t a =150oc 50 a emitter leakage current i ebo all v eb =4v, i c =0 25 na value continental device india limited data sheet page 1 of 5 continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
npn silicon planar rf transistors 2n3498, 2n3499, 2n3500, 2N3501 to-39 metal can package description symbol test condition units min typ max collector emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.2 v i c =50ma,i b =5ma 0.25 v 2n3500/3501 i c =150ma,i b =15ma* 0.4 v 2n3498/3499 i c =300ma,i b =30ma* 0.6 v base emitter saturation voltage v be(sat) i c =10ma,i b =1ma 0.8 v i c =50ma,i b =5ma 0.9 v 2n3500/3501 i c =150ma,i b =15ma* 1.2 v 2n3498/3499 i c =300ma,i b =30ma* 1.4 v dc current gain h fe * 2n3498/3500 i c =0.1ma,v ce =10v 20 2n3499/3501 35 2n3498/3500 i c =1ma,v ce =10v 25 2n3499/3501 50 2n3498/3500 i c =10ma,v ce =10v 35 2n3499/3501 75 2n3498/3500 i c =150ma,v ce =10v* 40 120 2n3499/3501 100 300 2n3500 i c =300ma,v ce =10v* 15 2N3501 20 2n3498 i c =300ma,v ce =10v* 15 2n3499 20 small signal characteristics input impedence h ie 2n3498/3500 i c =10ma,v ce =10v, 0.2 1.0 k 2n3499/3501 f=1khz 0.25 1.25 voltage feedback ratio h re 2n3498/3500 i c =10ma,v ce =10v, 2.5 x10 -4 2n3499/3501 f=1khz 4.0 small signal current gain | h fe | 2n3498/3500 i c =10ma,v ce =10v, 50 300 2n3499/3501 f=1khz 75 375 value continental device india limited data sheet page 2 of 5
npn silicon planar rf transistors 2n3498, 2n3499, 2n3500, 2N3501 to-39 metal can package description symbol test condition units min typ max output admittance h oe 2n3498/3500 i c =10ma,v ce =10v, 100 mhos 2n3499/3501 f=1khz 200 transition frequency f t all i c =20ma,v ce =20v, 150 mhz f=100mhz output capacitance c ob 2n3498/3499 v cb =10v,i e =0, f=100khz 10 pf 2n3500/3501 8pf input capacitance c ib v be =0.5v, i c =0, f=100khz all 80 pf switching characteristics delay time t d 20 ns i c =150ma, i b1 =15ma v cc =100v, v eb =2v rise time t r 35 ns storage time t s 800 ns i c =150ma, i b1 =i b2 =15ma v cc =100v fall time t s 80 ns *pulse test: pulse width < 300 s, duty cycle < 2% value continental device india limited data sheet page 3 of 5
2n3498, 2n3499, 2n3500, 2N3501 to-39 metal can package to-39 metal can package 2 1 3 pin configuration 1. emitter 2. base 3. collector dim min max all dimensions are in mm a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e?0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k12.70 ? l 42 deg 48 deg a b c e k d g l h j f 1 2 3 to-39 500 pcs/polybag 540 gm/500 pcs 3" x 7.5" x 7.5" 20k 17" x 15" x 13.5" 32k 40 kgs package net weight/qty details standard pack inner carton box qty outer carton box qty gr wt size size packing detail continental device india limited data sheet page 4 of 5
notes 2n3498, 2n3499, 2n3500, 2N3501 to-39 metal can package 2n3498_3501rev110801 disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suited for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so as to confirm that the device(s) meet functionality parameters for your application. the information furnished in the data sheet and on the cdil web site/cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in life saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email @ cdil.com www.cdilsemi.com continental device india limited data sheet page 5 of 5
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